Study of Si-Ge interdiffusion with phosphorus doping
نویسندگان
چکیده
منابع مشابه
Effect Of Phosphorus On Ge/Si(001) Island Formation
When Ge is deposited epitaxially on Si, the strain energy from the lattice mismatch causes the Ge in layers thicker than about four monolayers to form distinctive, three-dimensional islands. The shape of the islands is determined by the energies of the surface facets, facet edges, and interfaces. When phosphorus is added during the deposition, the surface energy changes, modifying the island sh...
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Doping in semiconductors is a fundamental issue for developing high performance devices. However, the doping behavior in Si nanocrystals (Si NCs) has not been fully understood so far. In the present work, P-doped Si NCs/SiO2 multilayers are fabricated. As revealed by XPS and ESR measurements, P dopants will preferentially passivate the surface states of Si NCs. Meanwhile, low temperature ESR sp...
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Although epitaxial growth has been traditionally monitored by reciprocal space techniques, such as reflection highenergy electron diffraction (RHEED), the development of surface-sensitive imaging techniques, such as scanning tunneling microscopy (STM), allows for monitoring in the real-space. RHEED averages information over relatively large sample regions, and is thus more representative of the...
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In this paper, we study band-to-band and intersubband (ISB) characteristics of Si- and Ge-doped GaN/AlN heterostructures (planar and nanowires) structurally designed to absorb in the short-wavelength infrared region, particularly at 1.55 μm. Regarding the band-to-band properties, we discuss the variation of the screening of the internal electric field by free carriers, as a function of the dopi...
متن کاملModulation doping in Ge(x)Si(1 - x)/Si strained layer heterostructures: Effects of alloy layer thickness, doping setback, and cladding layer dopant concentration
Selectively doped Gex Si , _ x lSi strained layer heterostructures have been grown in a single quantum well configuration on (OOl)-Si substrate using molecular beam epitaxy. The modulation doping effect has been observed inp-type structures only; although both nandp-type double heterostructures were grown. We have investigated the effects of: (i) alloy layer thickness (well width), (ii) doping ...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2016
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.4966570